l Fast Switching l Low ON Resistance(Rdson≤0.9Ω) l Low Gate Charge (Typical Data:24nC) l Low Reverse transfer capacitances(Typical:7pF) l 100% Single Pulse avalanche ene.

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID .

CS8N50 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS8N50A8R

CS8N50FA9R

CS8N05AEP-G

CS8N25A3R

CS8N25A4H

CS8N25A4R

CS8N25A8H

CS8N25A8R

CS8N25FA9

CS8N25FA9R

CS8N60

CS8N60A8D

CS8N60A8H