CS8N25A8R mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.47Ω)
* Low Gate Charge (Typical Data: 12.8nC)
* Low Reverse transfer capacitances(Typical: 7.9pF)
*.
Automotive、DC Motor Control and Class D Amplifier.
Absolute（TJ= 25℃ unless otherwise specified）：
Symbol Parameter
Rati.
VDSS
250
CS8N25 A8R, the silicon N-channel Enhanced VDMOSFETs, ID
8
is obtained by the self-aligned planar Technology which reduce
PD(TC=25℃)
75
the conduction loss, improve switching performance and
RDS(ON)Typ
0.36
enhance the avalanche .
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 768.78KB)