BTN1053K3 Description
CYStech Electronics Corp. 2013.10.01 Revised Date : 1/8 NPN Epitaxial Planar Transistor BTN1053K3 BVCEO IC RCESAT(MAX) 75V 2.5A 250mΩ.
BTN1053K3 Key Features
- Excellent HFE Characteristics up to 1A
- Low Saturation Voltage, VCE(sat)=0.15V(typ)@IC=1A, IB=50mA
- 5A peak pulse current
- Pb-free lead plating and halogen-free package