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BTN1053K3 - NPN Epitaxial Planar Transistor

Key Features

  • Excellent HFE Characteristics up to 1A.
  • Low Saturation Voltage, VCE(sat)=0.15V(typ)@IC=1A, IB=50mA.
  • 5A peak pulse current.
  • Pb-free lead plating and halogen-free package Symbol BTN1053K3 Outline TO-92L B：Base C：Collector E：Emitter Ordering Information Device BTN1053K3-0-TB-G BTN1053K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / bag,.

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Datasheet Details

Part number BTN1053K3
Manufacturer CYStech
File Size 297.38 KB
Description NPN Epitaxial Planar Transistor
Datasheet download datasheet BTN1053K3 Datasheet

Full PDF Text Transcription for BTN1053K3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for BTN1053K3. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C818K3 Issued Date : 2013.10.01 Revised Date : 2013.12.25 Page No. : 1/8 NPN Epitaxial Planar Transistor BTN1053K3 BVCEO IC RCESAT(M...

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No. : 1/8 NPN Epitaxial Planar Transistor BTN1053K3 BVCEO IC RCESAT(MAX) 75V 2.5A 250mΩ Features • Excellent HFE Characteristics up to 1A • Low Saturation Voltage, VCE(sat)=0.

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