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MTB020N03V8 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package Equivalent Circuit MTB020N03V8 Outline DFN3×3 G:Gate D:Drain S:Source Pin 1 Ordering Information Device MTB020N03V8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank,.

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Datasheet Details

Part number MTB020N03V8
Manufacturer CYStech
File Size 427.86 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB020N03V8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C737V8 Issued Date : 2017.03.06 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB020N03V8 BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TC=25°C RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A 30V 10A 18A 14.0mΩ 17.
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