900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






CYStech

MTB020N03V8 Datasheet Preview

MTB020N03V8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB020N03V8
BVDSS
ID@VGS=10V, TA=25°C
ID@VGS=10V, TC=25°C
RDSON(TYP)
VGS=10V, ID=10A
VGS=4.5V, ID=8A
30V
10A
18A
14.0mΩ
17.5mΩ
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
Equivalent Circuit
MTB020N03V8
Outline
DFN3×3
GGate DDrain SSource
Pin 1
Ordering Information
Device
MTB020N03V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB020N03V8
CYStek Product Specification




CYStech

MTB020N03V8 Datasheet Preview

MTB020N03V8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C737V8
Issued Date : 2017.03.06
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current *1
Single Pulse Avalanche Current
Single Pulse Avalanche Current @ L=0.1mH, VGS=10V, VDD=15V *2
Total Power Dissipation @TC=25
Total Power Dissipation @TA=25
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. 100% tested by conditions of L=0.1mH, IAS=6A, VGS=10V, VDD=15V
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Limits
30
±20
18
11.4
10
8
72
18
16.2
8
2.5
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
* Surface mounted on a 1 in² pad of 2oz copper.
Symbol
RθJC
RθJA
Value
16
50 *
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
30 -
- V VGS=0V, ID=250μA
ΔBVDSS/ΔTj - 0.02 - V/Reference to 25, ID=1mA
VGS(th)
1 - 2.5 V VDS=VGS, ID=250μA
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
IDSS
-
-
-
-
1
25
μA
VDS=24V, VGS=0V
VDS=24V, VGS=0V, Tj=125
*RDS(ON)
-
-
14
17.5
18
25
mΩ
ID=10A, VGS=10V
ID=8A, VGS=4.5V
*GFS
- 3.8
-
S VDS=10V, ID=1A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
- 492
-
- 67
-
- 49
-
- 5.8 -
- 16.6 -
- 31.2 -
- 7.6 -
pF VDS=25V, VGS=0V, f=1MHz
ns VDS=15V, ID=1A, VGS=10V, RG=6
MTB020N03V8
CYStek Product Specification


Part Number MTB020N03V8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
PDF Download

MTB020N03V8 Datasheet PDF





Similar Datasheet

1 MTB020N03V8 N-Channel Enhancement Mode Power MOSFET
CYStech





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy