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CYStech

MTB060N06I3 Datasheet Preview

MTB060N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 1/8
N -Channel Enhancement Mode Power MOSFET
MTB060N06I3 BVDSS
ID@VGS=10V, TC=25°C
RDSON(MAX)@VGS=10V, ID=10A
RDSON(MAX)@VGS=5V, ID=8A
60V
16A
35mΩ(typ.)
40mΩ(typ.)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB060N06I3
Outline
TO-251
GGate DDrain
SSource
G DS
Ordering Information
Device
Package
Shipping
MTB060N06I3-0-UA-G
TO-251
(Pb-free lead plating and halogen-free package)
80 pcs/tube, 50 tubes/box
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UA :80 pcs / tube, 50 tubes/box
Product rank, zero for no rank products
Product name
MTB060N06I3
CYStek Product Specification




CYStech

MTB060N06I3 Datasheet Preview

MTB060N06I3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=16A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C708I3
Issued Date : 2014.04.30
Revised Date : 2015.05.05
Page No. : 2/8
Limits
60
±20
16
10
30
16
12.8
3.6
20
8
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
6.25
110
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
60
1.0
-
-
-
-
12
-
-
-
-
-
-
-
-
- - V VGS=0V, ID=250μA
1.7 3.0 V VDS =VGS, ID=250μA
10 - S VDS =5V, ID=10A
-
±100
nA VGS=±20V, VDS=0V
- 1 μA VDS =48V, VGS =0V
- 25 μA VDS =40V, VGS =0V, Tj=125°C
- - A VDS =10V, VGS =10V
35 50 mΩ VGS =10V, ID=10A
40 55 mΩ VGS =5V, ID=8A
11 -
2.2 - nC ID=10A, VDS=20V, VGS=10V
4.2 -
11.7 - ns VDS=20V, ID=1A, VGS=10V,
5.2 -
RG=6Ω
18 -
MTB060N06I3
CYStek Product Specification


Part Number MTB060N06I3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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