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MTB060N06I3 - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTB060N06I3 Outline TO-251 G:Gate D:Drain S:Source G DS Ordering Information Device Package Shipping MTB060N06I3-0-UA-G TO-251 (Pb-free lead plating and halogen-free package) 80 pcs/tube, 50 tubes/box Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UA :80 pcs / tube, 50 tubes.

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Datasheet Details

Part number MTB060N06I3
Manufacturer CYStech
File Size 344.96 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB060N06I3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C708I3 Issued Date : 2014.04.30 Revised Date : 2015.05.05 Page No. : 1/8 N -Channel Enhancement Mode Power MOSFET MTB060N06I3 BVDSS ID@VGS=10V, TC=25°C RDSON(MAX)@VGS=10V, ID=10A RDSON(MAX)@VGS=5V, ID=8A 60V 16A 35mΩ(typ.) 40mΩ(typ.