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CYStech

MTB060N15J3 Datasheet Preview

MTB060N15J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 1/9
N -Channel Enhancement Mode Power MOSFET
MTB060N15J3 BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=4A
RDS(ON)@VGS=4.5V, ID=2A
150V
16A
59mΩ(typ)
60mΩ(typ)
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTB060N15J3
Outline
TO-252(DPAK)
GGate DDrain SSource
G DS
Ordering Information
Device
MTB060N15J3-0-T3-G
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB060N15J3
CYStek Product Specification




CYStech

MTB060N15J3 Datasheet Preview

MTB060N15J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=12mH, ID=9.8A, RG=25Ω
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Total Power Dissipation @TA=25
Total Power Dissipation @TA=100
Total Power Dissipation @TA=25
Total Power Dissipation @TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
*2
*2 IDSM
*3
*3
IDM
IAS
EAS
PD
*2
*2 PDSM
*3
*3
Tj, Tstg
Spec. No. : C970J3
Issued Date : 2014.06.14
Revised Date : 2014.06.16
Page No. : 2/9
Limits
150
±20
16
11.3
3.8
2.4
3.1
2.0
48
9.8
576
50
25
2.5
1.0
1.7
0.7
-55~+175
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Thermal Resistance, Junction-to-case, max
Rth,j-c
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
*2
*3
Rth,j-a
Value
3
50
75
Unit
°C/W
Note : *1. Pulse width limited by maximum junction temperature
*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.
*3. When the device is on the minimum pad size recommended.
*4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
*5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value
in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may
be used if the PCB allows it.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
150 -
- V VGS=0V, ID=250μA
BVDSS/Tj - 0.15 - V/°C Reference to 25°C, ID=250μA
VGS(th)
1.0 1.4 2.5 V VDS =VGS, ID=250μA
GFS *1
-
21
-
S VDS =10V, ID=4A
IGSS
-
-
±100
nA VGS=±20V, VDS=0V
MTB060N15J3
CYStek Product Specification


Part Number MTB060N15J3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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