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MTB1D7N03RH8 Datasheet Preview

MTB1D7N03RH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C638H8
Issued Date : 2019.05.03
Revised Date : 2020.02.25
Page No. : 1/ 11
N-Channel Enhancement Mode Power MOSFET
MTB1D7N03RH8
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
30V
131A(silicon limit)
84A(package limit)
26.2A
1.2mΩ(typ)
1.9mΩ(typ)
Symbol
MTB1D7N03RH8
GGate DDrain SSource
Outline
Pin 1
S
S
S
G
DFN5×6
D
D
D
D
G
S
S
S
D
D
D
D
Pin 1
Ordering Information
Device
MTB1D7N03RH8-0-T6-G
Package
DFN 5 ×6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13reel
Product rank, zero for no rank products
Product name
MTB1D7N03RH8
CYStek Product Specification




CYStech

MTB1D7N03RH8 Datasheet Preview

MTB1D7N03RH8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C638H8
Issued Date : 2019.05.03
Revised Date : 2020.02.25
Page No. : 2/ 11
Absolute Maximum Ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=25C, VGS=10V
Continuous Drain Current @ TC=100C, VGS=10V
Continuous Drain Current @ TA=25C, VGS=10V
Continuous Drain Current @ TA=70C, VGS=10V
Continuous Drain Current @ TA=85C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=24A, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
TC=25
TC=100
Total Power Dissipation
TA=25C
TA=70C
TA=85C
Operating Junction and Storage Temperature Range
(Note 1)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
(Note 2)
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
10s Steady State
30
±20
131 (silicon limit)
84 (package limit)
83
39.5 26.2
31.6 21.0
28.5 18.9
386
40
288
6
62.5
25
5.7 2.5
4.0 1.8
3.6 1.6
-55~+150
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
(Note 2)
Thermal Resistance, Junction-to-case
t10s
Steady State
Symbol
RθJA
RθJC
Typical
18
42
1.6
Maximum
22
50
2
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2.The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the users specific board design.
3.Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4.100% tested by conditions of L=0.1mH, IAS=30A, VGS=10V, VDD=15V
MTB1D7N03RH8
CYStek Product Specification


Part Number MTB1D7N03RH8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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