• Part: MTB1D8NR03E3
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Manufacturer: CYStech
  • Size: 357.56 KB
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Datasheet Summary

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET Spec. No. : C948E3 Issued Date : 2015.05.08 Revised Date : Page No. : 1/8 Features - Low Gate Charge - Simple Drive Requirement - Fast Switching Characteristic - RoHS pliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol Outline TO-220 G:Gate D:Drain S:Source Ordering Information Device Package Shipping MTB1D8NR03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS pliant products, G for RoHS pliant and green pound...