MTB1D8NR03E3 Datasheet PDF - CYStech N-Channel Enhancement Mode Power MOSFET Specs

MTB1D8NR03E3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

Low Gate Charge.
Simple Drive Requirement.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：Source SDG Ordering Information Device Package Shipping MTB1D8NR03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for.

Datasheet Details

Part number	MTB1D8NR03E3
Manufacturer	CYStech
File Size	357.56 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1D8NR03E3 Datasheet
Additional preview pages of the MTB1D8NR03E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB1D8NR03E3 Spec. No. : C948E3 Issued Date : 2015.05.08 Revised Date : Page No. : 1/8 Features • Low Gate Charge • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.

Published: Mar 14, 2020 |