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MTB100A06KRH8 - Dual N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • ESD protected gate.
  • Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 11.3A 7.1A 3.2A 2.6A 82mΩ(typ) 116mΩ(typ) 183mΩ(typ) Equivalent Circuit MTB100A06KRH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source.

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Datasheet Details

Part number MTB100A06KRH8
Manufacturer CYStech
File Size 858.46 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB100A06KRH8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C666H8 Issued Date : 2019.12.13 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB100A06KRH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  ESD protected gate  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 11.3A 7.1A 3.2A 2.