Datasheet Summary
CYStech Electronics Corp.
Spec. No. : C666H8 Issued Date : 2019.12.13 Revised Date : Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- Pb-free lead plating and Halogen-free package
BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C
RDS(ON)@VGS=10V, ID=2.2A
RDS(ON)@VGS=4.5V, ID=1.3A
RDS(ON)@VGS=3.3V, ID=1A
60V 11.3A 7.1A 3.2A 2.6A 82mΩ(typ) 116mΩ(typ) 183mΩ(typ)
Equivalent Circuit
Outline
Pin 1
DFN5×6 Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device MTB100A06KRH8-0-T6-G...