MTB180A06KH8 Description
CYStech Electronics Corp. 2019.09.06 Revised Date : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB180A06KH8.
MTB180A06KH8 Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- ESD protected gate
- Pb-free lead plating and Halogen-free package