MTB180A06KH8 Datasheet Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No.

Datasheet Details

Part number	MTB180A06KH8
Manufacturer	CYStech
File Size	832.11 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB180A06KH8-CYStech.pdf

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
ESD protected gate.
Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 8.05A 5.09A 2.3A 1.8A 172mΩ(typ) 204mΩ(typ) 390mΩ(typ) Equivalent Circuit MTB180A06KH8 Outline Pin 1 DFN5×6 Pin 1 G：Gate D：Drain S：Source.

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