MTB1D8N04E3 Datasheet PDF - CYStech N-Channel Enhancement Mode Power MOSFET Specs

MTB1D8N04E3 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Features

Low On Resistance.
Simple Drive Requirement.
Low Gate Charge.
Fast Switching Characteristic.
RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB1D8N04E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS co.

Datasheet Details

Part number	MTB1D8N04E3
Manufacturer	CYStech
File Size	633.30 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTB1D8N04E3 Datasheet
Additional preview pages of the MTB1D8N04E3 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB1D8N04E3 Spec. No. : C007E3 Issued Date : 2018.10.18 Revised Date : Page No. : 1/ 8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.

Published: Mar 14, 2020 |