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MTB1D8N04E3 Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

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Datasheet Details

Part number MTB1D8N04E3
Manufacturer CYStech
File Size 633.30 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D8N04E3 Datasheet

Overview

CYStech Electronics Corp.

N-Channel Enhancement Mode Power MOSFET MTB1D8N04E3 Spec.

No.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB1D8N04E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS co.

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