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CYStech

MTB1D8N04E3 Datasheet Preview

MTB1D8N04E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB1D8N04E3
Spec. No. : C007E3
Issued Date : 2018.10.18
Revised Date :
Page No. : 1/ 8
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=50A
40V
180A
20A
1.7mΩ(typ)
Symbol
MTB1D8N04E3
Outline
TO-220
GGate DDrain SSource
GDS
Ordering Information
Device
Package
Shipping
MTB1D8N04E3-0-UB-X
TO-220
(Pb-free lead plating package)
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB1D8N04E3
CYStek Product Specification




CYStech

MTB1D8N04E3 Datasheet Preview

MTB1D8N04E3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C007E3
Issued Date : 2018.10.18
Revised Date :
Page No. : 2/ 8
Absolute Maximum Ratings (TC=25C)
Parameter
Symbol
Drain-Source Voltage (Note 1)
Gate-Source Voltage
Continuous Drain Current @ TC=25C, VGS=10V
(Note 1)
Continuous Drain Current @ TC=100C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70C, VGS=10V
(Note 2)
Pulsed Drain Current
Avalanche Current @L=0.1mH
Single Pulse Avalanche Energy @ L=1mH, ID=48 Amps, VDD=25V
(Note 4)
Repetitive Avalanche Energy
(Note 3)
TC=25C
(Note 1)
Power Dissipation
TC=100C
TA=25C
(Note 1)
(Note 2)
TA=70C
(Note 2)
Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm)
from case for 10 seconds
Maximum Temperature for Soldering @ Package Body for 10
seconds
Operating Junction and Storage Temperature
*Drain current limited by maximum junction temperature
VDS
VGS
ID
IDSM
IDM
IAS
EAS
EAR
PD
PDSM
TL
TPKG
Tj, Tstg
Limits
40
±20
180
127.3
20
16
526
100
1152
18
188
94
2
1.3
300
260
-55~+175
Unit
V
A
mJ
W
C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
0.8
62.5
Unit
C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the users specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. 100% tested by condition of VDD=25V, ID=50A, L=0.1mH, VGS=10V.
5. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
6. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient
MTB1D8N04E3
CYStek Product Specification


Part Number MTB1D8N04E3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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