- Part: MTB1D8N04E3
- Description: N-Channel Enhancement Mode Power MOSFET
- Category: MOSFET
- Manufacturer: CYStech
- Size: 633.30 KB
Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol