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MTB1D8NR03E3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Fast Switching Characteristic.
  • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：Source SDG Ordering Information Device Package Shipping MTB1D8NR03E3-0-UB-S TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for.

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Datasheet Details

Part number MTB1D8NR03E3
Manufacturer CYStech
File Size 357.56 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTB1D8NR03E3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB1D8NR03E3 Spec. No. : C948E3 Issued Date : 2015.05.08 Revised Date : Page No. : 1/8 Features • Low Gate Charge • Simple Drive Requirement • Fast Switching Characteristic • RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.
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