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MTB1D8NR03E3 - N-Channel Enhancement Mode Power MOSFET

MTB1D8NR03E3 Description

CYStech Electronics Corp.N-Channel Enhancement Mode Power MOSFET MTB1D8NR03E3 Spec.No.: C948E3 Issued Date : 2015.05.08 Revised Date : Page No.: .

MTB1D8NR03E3 Features

* Low Gate Charge
* Simple Drive Requirement
* Fast Switching Characteristic
* RoHS compliant package BVDSS ID @VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=30A RDSON(TYP) @ VGS=4.5V, ID=20A 30V 180A 2.7mΩ 3.3mΩ Symbol MTB1D8NR03E3 Outline TO-220 G：Gate D：Drain S：So

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Datasheet Details

Part number
MTB1D8NR03E3
Manufacturer
CYStech
File Size
357.56 KB
Datasheet
MTB1D8NR03E3-CYStech.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET CYStech
CYStech MTB1D8NR03E3-like datasheet