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MTBA5C10Q8 Datasheet Preview

MTBA5C10Q8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 1/10
N- AND P-Channel Logic Level Enhancement Mode MOSFET
MTBA5C10Q8
N-CH P-CH
BVDSS
100V -100V
ID 3A -2.5A
RDSON(MAX.) 150mΩ 250mΩ
Description
The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single
SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Fast switching speed
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBA5C10Q8
Outline
SOP-8
GGate
SSource
DDrain
MTBA5C10Q8
CYStek Product Specification




CYStech

MTBA5C10Q8 Datasheet Preview

MTBA5C10Q8 Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C744Q8
Issued Date : 2009.10.16
Revised Date : 2011.10.03
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TC=25 °C
Continuous Drain Current @TC=100 °C
Pulsed Drain Current (Note 1)
Power Dissipation @TA=25°C
Power Dissipation @TA=100°C
Symbol
BVDSS
VGS
ID
ID
IDM
PD
Limits
N-channel P-channel
100 -100
±20 ±20
3 -2.5
2.1 -1.8
12 -10
2.4
1.3
Operating Junction and Storage Temperature Range
Tj; Tstg
-55~+175
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (Note 2)
RθJC
RθJA
25
62.5
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad.
Unit
V
V
A
A
A
W
°C
°C/W
°C/W
N-Channel Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
*ID(ON)
*RDS(ON)
*GFS
100
1.0
-
-
-
12
-
-
-
- - V VGS=0, ID=250μA
- 3.0 V VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0
- 1 μA VDS=80V, VGS=0
- 25 μA VDS=70V, VGS=0, Tj=125°C
- - A VGS=10V, VDS=5V
125
168
150
225
mΩ
ID=2.5A, VGS=10V
ID=2A, VGS=5V
8 - S VDS=5V, ID=2.5A
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
*Qg
*Qgs
*Qgd
Body Diode
*VF(S-D)
*IS
*ISM
-
-
-
-
-
-
-
-
-
-
-
-
-
740 -
62 - pF VDS=20V, VGS=0, f=1MHz
50 -
15 -
35
25
-
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
25 -
18.8 -
3.8 - nC VDS=80V, ID=2.5A, VGS=10V
4.5 -
- 1.3 V VGS=0V, IF=3A
3
12
-
-
A
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTBA5C10Q8
CYStek Product Specification


Part Number MTBA5C10Q8
Description N & P-Channel Enhancement Mode Power MOSFET
Maker CYStech
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