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MTBA5C10Q8 - N & P-Channel Enhancement Mode Power MOSFET

General Description

The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • Simple drive requirement.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTBA5C10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBA5C10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2011.10.03 Page No. : 2/10 Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage.

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Datasheet Details

Part number MTBA5C10Q8
Manufacturer CYStech
File Size 283.76 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5C10Q8 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C744Q8 Issued Date : 2009.10.16 Revised Date : 2011.10.03 Page No. : 1/10 N- AND P-Channel Logic Level Enhancement Mode MOSFET MTBA5C10Q8 N-CH P-CH BVDSS 100V -100V ID 3A -2.5A RDSON(MAX.) 150mΩ 250mΩ Description The MTBA5C10Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.