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MTBA5N10FP - N-Channel Enhancement Mode Power MOSFET

General Description

The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package Symbol MTBA5N10FP Outline TO-220FP G：Gate D：Drain S：Source MTBA5N10FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C731FP Issued Date : 2012.12.06 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Dra.

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Datasheet Details

Part number MTBA5N10FP
Manufacturer CYStech
File Size 298.98 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5N10FP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C731FP Issued Date : 2012.12.06 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTBA5N10FP BVDSS ID 100V 10A RDS(ON)@VGS=10V, ID=10A 151 mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 165 mΩ(typ) Description The MTBA5N10FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.