MTBA5N10J3 Overview
Key Features
- Low Gate Charge
- Simple Drive Requirement
- Pb-free lead plating & Halogen-free package RDSON(MAX) 150mΩ Equivalent Circuit MTBA5N10J3 Outline TO-252 G：Gate D：Drain S：Source GDS
| Part | MTBA5N10J3 |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Category | MOSFET |
| Manufacturer | CYStech |
| Size | 252.71 KB |
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| No distributor offers were returned for this part. | |||
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| A2SHB | HAOHAI | N-Channel MOSFET |
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |