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CYStech

MTBA5N10J3 Datasheet Preview

MTBA5N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 1/7
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10J3
BVDSS
100V
ID 10A
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating & Halogen-free package
RDSON(MAX)
150mΩ
Equivalent Circuit
MTBA5N10J3
Outline
TO-252
GGate DDrain
SSource
GDS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25
Total Power Dissipation @TC=100
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
EAR
Pd
Tj, Tstg
MTBA5N10J3
Limits
100
±30
10
7
40
12
7.2
3.6
35
15
-55~+175
Unit
V
A
mJ
W
°C
CYStek Product Specification




CYStech

MTBA5N10J3 Datasheet Preview

MTBA5N10J3 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C731J3
Issued Date : 2009.07.07
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.2
62.5
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
ID(ON) *1
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
Ciss
Coss
Crss
Rg
100
1
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
-
-
-
-
130
150
8
18.8
3.8
4.5
15
35
25
25
1070
52
40
2
-
3
±100
1
25
-
150
175
-
-
-
-
-
-
-
-
-
-
-
-
V
V
nA
μA
μA
A
mΩ
mΩ
S
nC
ns
pF
Ω
Source-Drain Diode
IS *1
ISM *3
-
-
-
-
10
40
A
VSD *1
- - 1.3 V
trr - 120 - ns
Qrr - 520 - nC
Note : *1.Pulse Test : Pulse Width 300μs, Duty Cycle2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
VGS=0, ID=250μA
VDS =VGS, ID=250μA
VGS=±30, VDS=0
VDS =80V, VGS =0
VDS =70V, VGS =0, TJ=125°C
VDS =10V, VGS =10V
VGS =10V, ID=10A
VGS =5V, ID=10A
VDS =5V, ID=10A
ID=10A, VDS=80V, VGS=10V
VDS=50V, ID=1A, VGS=10V,
RG=6Ω
VGS=0V, VDS=25V, f=1MHz
VGS=15mV, VDS=0, f=1MHz
IF=IS, VGS=0V
IF=10A, dIF/dt=100A/μs
Ordering Information
Device
MTBA5N10J3
Package
Shipping
TO-252
(Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Marking
BA5N10
MTBA5N10J3
CYStek Product Specification


Part Number MTBA5N10J3
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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