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MTBA5N10J3 - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number MTBA5N10J3
Manufacturer CYStech
File Size 252.71 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5N10J3 Datasheet

Overview

CYStech Electronics Corp.

Spec.

No.

Key Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating & Halogen-free package RDSON(MAX) 150mΩ Equivalent Circuit MTBA5N10J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current.
  • 1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=12A, RG=25Ω Repetitive Avalan.

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