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MTBA5N10Q8 - N-Channel Enhancement Mode Power MOSFET

Description

The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.

Features

  • Low Gate Charge.
  • Simple Drive Requirement.
  • Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTBA5N10Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=3A, VGS=10V, VDD=25.

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Datasheet Details

Part number MTBA5N10Q8
Manufacturer CYStech
File Size 257.27 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5N10Q8 Datasheet
Additional preview pages of the MTBA5N10Q8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C731Q8 Issued Date : 2013.07.19 Revised Date : Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10Q8 BVDSS ID RDSON(TYP) VGS=10V, ID=3A VGS=4.5V, ID=2A 100V 3A 123mΩ 130mΩ Description The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTBA5N10Q8 CYStek Product Specification CYStech Electronics Corp.
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