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MTBA5N10Q8 Datasheet Preview

MTBA5N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date :
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10Q8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=3A
VGS=4.5V, ID=2A
100V
3A
123mΩ
130mΩ
Description
The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications.
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
Symbol
MTBA5N10Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTBA5N10Q8
CYStek Product Specification




CYStech

MTBA5N10Q8 Datasheet Preview

MTBA5N10Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=3A, VGS=10V, VDD=25V
Total Power Dissipation *3
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C731Q8
Issued Date : 2013.07.19
Revised Date :
Page No. : 2/9
Limits
100
±20
3.5
2.8
14 *1
20
9
2.5
1.6
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
4 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
100 -
-
1.0 1.5 2.5
V
VGS=0, ID=250μA
VDS =VGS, ID=250μA
-
-
±100
nA VGS=±20, VDS=0
-
-
-
-
1
25
μA
VDS =80V, VGS =0
VDS =80V, VGS =0, TJ=85°C
-
-
123
127
145
155
mΩ
VGS =10V, ID=3A
VGS =4.5V, ID=2A
- 6 - S VDS =5V, ID=3A
- 19 -
- 5 - nC ID=3A, VDS=50V, VGS=10V
- 3.7 -
- 13 -
-
-
15
52
-
-
ns VDS=50V, ID=1A, VGS=10V, RG=6Ω
-8-
MTBA5N10Q8
CYStek Product Specification


Part Number MTBA5N10Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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