MTBA5N10Q8 - N-Channel Enhancement Mode Power MOSFET

Product Overview

CYStech

Datasheet Details

Part number	MTBA5N10Q8
Manufacturer	CYStech
File Size	257.27 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	MTBA5N10Q8 Datasheet
Additional preview pages of the MTBA5N10Q8 datasheet.

Product details

Description

The MTBA5N10Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

Low Gate Charge.
Simple Drive Requirement.
Pb-free lead plating package Symbol MTBA5N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTBA5N10Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=2mH, ID=3A, VGS=10V, VDD=25.

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Published: Apr 28, 2016 |