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MTBA5N10V8 - N-Channel Enhancement Mode Power MOSFET

Description

The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

Features

  • Single Drive Requirement.
  • Low On-resistance.
  • Fast Switching Characteristic.
  • Dynamic dv/dt rating.
  • Repetitive Avalanche Rated.
  • Pb-free lead plating and Halogen-free package Equivalent Circuit MTBA5N10V8 Outline Pin 1 DFN3×3 G:Gate D:Drain S:Source Ordering Information Device MTBA5N10V8-0-T1-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel MTBA5N10V8 CYStek Product Specification CYStech.

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Datasheet Details

Part number MTBA5N10V8
Manufacturer CYStech
File Size 280.85 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTBA5N10V8 Datasheet
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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C731V8 Issued Date : 2012.08.24 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTBA5N10V8 BVDSS ID RDSON(TYP) VGS=10V, ID=5A VGS=4.5V, ID=5A 100V 7A 133 mΩ 140 mΩ Description The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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