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CYStech

MTBA5N10V8 Datasheet Preview

MTBA5N10V8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C731V8
Issued Date : 2012.08.24
Revised Date :
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTBA5N10V8 BVDSS
ID
RDSON(TYP)
VGS=10V, ID=5A
VGS=4.5V, ID=5A
100V
7A
133 mΩ
140 mΩ
Description
The MTBA5N10V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTBA5N10V8
Outline
Pin 1
DFN3×3
GGate DDrain SSource
Ordering Information
Device
MTBA5N10V8-0-T1-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTBA5N10V8
CYStek Product Specification




CYStech

MTBA5N10V8 Datasheet Preview

MTBA5N10V8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C731V8
Issued Date : 2012.08.24
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=100°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=7A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
TC=25
Total Power Dissipation
TC=100
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
100
±20
7
4.4
2.5
1.6
20 *1
7
2.5
1.2 *2
18
11
2.4 *3
1.4
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
7 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
53 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on a 1 in² pad of 2oz copper. In practice Rth,j-a will be determined by the customer’s PCB characteristics.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
100
1.0
-
-
-
-
-
-
-
-
-
-
1.8
7
-
-
-
133
140
1274
30
22
-
2.5
-
±100
1
25
160
170
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=7A
nA VGS=±20
μA
VDS =80V, VGS =0
VDS =80V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=5A
mΩ VGS =4.5V, ID=5A
pF VDS=25V, VGS=0V, f=1MHz
MTBA5N10V8
CYStek Product Specification


Part Number MTBA5N10V8
Description N-Channel Enhancement Mode Power MOSFET
Maker CYStech
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