MTDN8233CDV8 Datasheet PDF (Dual N-Channel Enhancement Mode Power MOSFET)

MTDN8233CDV8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

Simple drive requirement.
Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A.
Low on-resistance.
Fast switching speed.
ESD protected.
Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.5 mΩ Equivalent Circuit MTDN8233CDV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTDN8233CDV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tap.

Datasheet Details

Part number	MTDN8233CDV8
Manufacturer	CYStech
File Size	311.47 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	MTDN8233CDV8 Datasheet
Additional preview pages of the MTDN8233CDV8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C911V8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 Common Drain Dual N -Channel Enhancement Mode MOSFET MTDN8233CDV8 BVDSS ID VGS=4.5V VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A RDSON (TYP.) VGS=3.7V, ID=5.5A Features • Simple drive requirement • Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A • Low on-resistance • Fast switching speed • ESD protected • Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.

Published: Apr 28, 2016 |