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MTDN8233X6 - Dual N-Channel Enhancement Mode Power MOSFET

Description

package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Features

  • Simple drive requirement.
  • Low gate charge.
  • Low on-resistance.
  • Fast switching speed.
  • ESD protected.
  • Pb-free lead plating and halogen-free package Equivalent Circuit MTDN8233X6 Outline TDFN2×3-6L G：Gate S：Source D：Drain MTDN8233X6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C911X6 Issued Date : 2013.07.12 Revised Date : 2013.07.23 Page No. : 2/10 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdow.

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Datasheet Details

Part number MTDN8233X6
Manufacturer CYStech
File Size 240.36 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN8233X6 Datasheet

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C911X6 Issued Date : 2013.07.12 Revised Date : 2013.07.23 Page No. : 1/10 Dual N -Channel Enhancement Mode MOSFET MTDN8233X6 BVDSS ID RDSON (TYP.) VGS=4.5V VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A VGS=3.7V, ID=5.5A VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A 20V 11A 6.0mΩ 6.0mΩ 6.2 mΩ 6.7 mΩ 7.8 mΩ Description The MTDN8233X6 consists of two N-channel enhancement-mode MOSFETs in a single TDFN2×3-6L package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TDFN2×3-6L package is universally preferred for all commercial-industrial surface mount applications.
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