Datasheet Details
| Part number | MTDN8810T8 |
|---|---|
| Manufacturer | CYStech |
| File Size | 374.14 KB |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Datasheet | MTDN8810T8-CYStech.pdf |
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Overview: CYStech Electronics Corp. Spec. No. : C582T8 Issued Date : 2013.07.25 Revised Date : 2013.09.03 Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTDN8810T8 BVDSS ID 20V 5A RDSON@VGS=4.5V, ID=5A 17.5mΩ(typ) RDSON@VGS=2.5V,ID=2.6A 25mΩ(typ) RDSON@VGS=1.
| Part number | MTDN8810T8 |
|---|---|
| Manufacturer | CYStech |
| File Size | 374.14 KB |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Datasheet | MTDN8810T8-CYStech.pdf |
|
|
|
The MTDN8810T8 is a dual N-channel enhancement-mode MOSFET, providing the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost effectiveness and is suitable for applications such as power management of portable device.
The TSSOP-8 package is universally preferred for all mercial-industrial surface mount applications.
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