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MTDN8810AT8 Datasheet Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C779T8 Issued Date : 2014.04.15 Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTDN8810AT8 BVDSS ID 20V 5A RDSON@VGS=4.5V, ID=5A 17.5mΩ(typ) RDSON@VGS=2.5V,ID=2.6A 25mΩ(typ) RDSON@VGS=1.

Datasheet Details

Part number MTDN8810AT8
Manufacturer CYStech
File Size 425.59 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet MTDN8810AT8-CYStech.pdf

Key Features

  • 1.8V drive available.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package Equivalent Circuit MTDN8810AT8 G：Gate S : Source D : Drain Ordering Information Device MTDN8810AT8-0-T6-G Package TSSOP-8 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs/ Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Pro.

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