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MTDN8233CDV8 Datasheet Dual N-channel Enhancement Mode Power MOSFET

Manufacturer: CYStech

Overview: CYStech Electronics Corp. Spec. No. : C911V8 Issued Date : 2013.12.02 Revised Date : Page No. : 1/9 mon Drain Dual N -Channel Enhancement Mode MOSFET MTDN8233CDV8 BVDSS ID VGS=4.5V VGS=4.5V, ID=5.5A VGS=4.0V, ID=5.5A RDSON (TYP.) VGS=3.7V, ID=5.

Datasheet Details

Part number MTDN8233CDV8
Manufacturer CYStech
File Size 311.47 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet MTDN8233CDV8-CYStech.pdf

Key Features

  • Simple drive requirement.
  • Low gate charge VGS=3.1V, ID=5.5A VGS=2.5V, ID=5.5A.
  • Low on-resistance.
  • Fast switching speed.
  • ESD protected.
  • Pb-free lead plating and halogen-free package 20V 10A 8.1mΩ 8.4mΩ 8.6 mΩ 9.4 mΩ 10.5 mΩ Equivalent Circuit MTDN8233CDV8 Outline Pin 1 DFN3×3 G：Gate S：Source D：Drain Ordering Information Device MTDN8233CDV8-0-T6-G Package DFN3×3 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tap.

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