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MTDN8810AT8 - Dual N-Channel Enhancement Mode Power MOSFET

Features

  • 1.8V drive available.
  • Low on-resistance.
  • Fast switching speed.
  • Pb-free lead plating package Equivalent Circuit MTDN8810AT8 G：Gate S : Source D : Drain Ordering Information Device MTDN8810AT8-0-T6-G Package TSSOP-8 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs/ Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Pro.

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Datasheet preview – MTDN8810AT8

Datasheet Details

Part number MTDN8810AT8
Manufacturer CYStech
File Size 425.59 KB
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTDN8810AT8 Datasheet
Additional preview pages of the MTDN8810AT8 datasheet.

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Full PDF Text Transcription

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CYStech Electronics Corp. Spec. No. : C779T8 Issued Date : 2014.04.15 Revised Date : Page No. : 1/8 Dual N-Channel Enhancement Mode MOSFET MTDN8810AT8 BVDSS ID 20V 5A RDSON@VGS=4.5V, ID=5A 17.5mΩ(typ) RDSON@VGS=2.5V,ID=2.6A 25mΩ(typ) RDSON@VGS=1.8V,ID=1A 41mΩ(typ) Features • 1.
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