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MTEF1P15AN6 Datasheet Preview

MTEF1P15AN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
MTEF1P15AN6
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 1/9
Description
The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement
Low on-resistance
Small package outline
Pb-free lead plating and halogen-free package
Equivalent Circuit
MTEF1P15AN6
GGate SSource DDrain
Absolute Maximum Ratings (Ta=25°C)
Drain-Source Voltage
Parameter
Gate-Source Voltage
TC=25 °C
Continuous Drain Current
TC=70 °C
TA=25 °C (Note 1)
TA=70 °C (Note 1)
Pulsed Drain Current (Note 2, 3)
TC=25 °C
Total Power Dissipation
TC=70 °C
TA=25 °C
TA=70 °C
Operating Junction Temperature and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Limits
-150
±20
-1.7
-1.4
-1.3
-1.0
-6.8
3.2
2.1
2
1.25
-55~+150
Unit
V
A
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 1)
MTEF1P15AN6
Symbol
Rth,j-c
RθJA
Value
39
62.5
Unit
°C/W
CYStek Product Specification




CYStech

MTEF1P15AN6 Datasheet Preview

MTEF1P15AN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C896N6
Issued Date : 2013.02.21
Revised Date : 2015.04.30
Page No. : 2/9
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t5 sec. 156/W when mounted on minimum copper pad.
2.Pulse width limited by maximum junction temperature.
3.Pulse Width 300μs, Duty Cycle2%
Electrical Characteristics (Ta=25°C, unless otherwise noted)
Symbol
Min. Typ. Max. Unit
Test Conditions
Static
BVDSS
-150 -
- V VGS=0, ID=-250μA
ΔBVDSS/ΔTj - -0.1
- V/Reference to 25, ID=-250μA
VGS(th)
-2 -2.9
-4
V VDS=VGS, ID=-250μA
IGSS
IDSS
-
-
-
-
±100
-100
nA
VGS=±20V, VDS=0
VDS=-120V, VGS=0, Tj=25
- - -10 μA VDS=-120V, VGS=0, Tj=55
*RDS(ON)
-
-
554
585
820
850
mΩ
ID=-1.4A, VGS=-10V
ID=-1A, VGS=-6V
*GFS
- 2.9
-
S VDS=-10V, ID=-1.4A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
- 571
-
- 29 - pF VDS=-30V, VGS=0, f=1MHz
- 17
-
-9
-
-6
- 23
-
-
ns VDS=-75V, ID=-1A, VGS=-10V, RG=1
-8
-
- 11
-
- 2.5 - nC VDS=-75V, ID=-1A, VGS=-10V
- 2.4
-
Source-Drain Diode
*IS -
*ISM
-
*VSD
-
*Trr -
Qrr -
-
-
-0.77
60
120
-1.7
-6.8
-1.2
-
-
A
V IS=-1A,VGS=0V
ns
nC
IS=-1A,VGS=0V,dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
Ordering Information
Device
MTEF1P15AN6-0-T1-G
Package
SOT-26
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
MTEF1P15AN6
CYStek Product Specification


Part Number MTEF1P15AN6
Description P-Channel Enhancement Mode Power MOSFET
Maker CYStech
Total Page 9 Pages
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