CYStech

MTEF1P15AN6 Datasheet Preview

MTEF1P15AN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.

P-Channel Enhancement Mode Power MOSFET

MTEF1P15AN6

Spec. No. : C896N6

Issued Date : 2013.02.21

Revised Date : 2015.04.30

Page No. : 1/9

Description

The MTEF1P15AN6 is a P-channel enhancement-mode MOSFET, providing the designer with the best

combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.

The SOT-26 package is universally preferred for all commercial-industrial surface mount applications.

Features

• Simple drive requirement

• Low on-resistance

• Small package outline

• Pb-free lead plating and halogen-free package

Equivalent Circuit

MTEF1P15AN6

G：Gate S：Source D：Drain

Absolute Maximum Ratings (Ta=25°C)

Drain-Source Voltage

Parameter

Gate-Source Voltage

TC=25 °C

Continuous Drain Current

TC=70 °C

TA=25 °C (Note 1)

TA=70 °C (Note 1)

Pulsed Drain Current (Note 2, 3)

TC=25 °C

Total Power Dissipation

TC=70 °C

TA=25 °C

TA=70 °C

Operating Junction Temperature and Storage Temperature Range

Symbol

VDS

VGS

IDM

Tj, Tstg

Limits

-150

±20

-1.7

-1.4

-1.3

-1.0

-6.8

3.2

2.1

1.25

-55~+150

Unit

°C

Thermal Data

Parameter

Thermal Resistance, Junction-to-case, max

Thermal Resistance, Junction-to-ambient, max (Note 1)

MTEF1P15AN6

Symbol

Rth,j-c

RθJA

Value

62.5

Unit

°C/W

CYStek Product Specification

CYStech

MTEF1P15AN6 Datasheet Preview

MTEF1P15AN6 Datasheet

P-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.

Spec. No. : C896N6

Issued Date : 2013.02.21

Revised Date : 2015.04.30

Page No. : 2/9

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad.

2.Pulse width limited by maximum junction temperature.

3.Pulse Width ≤300μs, Duty Cycle≤2%

Electrical Characteristics (Ta=25°C, unless otherwise noted)

Symbol

Min. Typ. Max. Unit

Test Conditions

Static

BVDSS

-150 -

- V VGS=0, ID=-250μA

ΔBVDSS/ΔTj - -0.1

- V/℃ Reference to 25℃, ID=-250μA

VGS(th)

-2 -2.9

-4

V VDS=VGS, ID=-250μA

IGSS

IDSS

±100

-100

VGS=±20V, VDS=0

VDS=-120V, VGS=0, Tj=25℃

- - -10 μA VDS=-120V, VGS=0, Tj=55℃

*RDS(ON)

554

585

820

850

mΩ

ID=-1.4A, VGS=-10V

ID=-1A, VGS=-6V

*GFS

- 2.9

S VDS=-10V, ID=-1.4A

Dynamic

Ciss

Coss

Crss

td(ON)

td(OFF)

Qgs

Qgd

- 571

- 29 - pF VDS=-30V, VGS=0, f=1MHz

- 17

-9

-6

- 23

ns VDS=-75V, ID=-1A, VGS=-10V, RG=1Ω

-8

- 11

- 2.5 - nC VDS=-75V, ID=-1A, VGS=-10V

- 2.4

Source-Drain Diode

*IS -

*ISM

*VSD

*Trr -

Qrr -

-0.77

120

-1.7

-6.8

-1.2

V IS=-1A,VGS=0V

IS=-1A,VGS=0V,dI/dt=100A/μs

*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%

Ordering Information

Device

MTEF1P15AN6-0-T1-G

Package

SOT-26

(Pb-free lead plating and halogen-free package)

Shipping

3000 pcs / Tape & Reel

Environment friendly grade : S for RoHS compliant products, G for RoHS compliant

and green compound products

Packing spec, T1 : 3000 pcs / tape & reel, 7” reel

Product rank, zero for no rank products

Product name

MTEF1P15AN6

CYStek Product Specification

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