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MTN4N60BI3 - N-Channel Enhancement Mode Power MOSFET

Features

  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Pb-free lead plating and halogen-free package 600V 4.0A 1.7Ω.

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Datasheet Details

Part number MTN4N60BI3
Manufacturer CYStech
File Size 430.50 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTN4N60BI3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. Spec. No. : C128I3 Issued Date : 2015.06.01 Revised Date : Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTN4N60BI3 BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=2A Features • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and halogen-free package 600V 4.0A 1.
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