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CYStech Electronics

MTB55N10Q8 Datasheet Preview

MTB55N10Q8 Datasheet

N-Channel MOSFET

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CYStech Electronics Corp.
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2016.08.10
Page No. : 1/9
N -Channel Logic Level Enhancement Mode Power MOSFET
MTB55N10Q8 BVDSS
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=4.5A
VGS=4.5V, ID=3A
Features
Low Gate Charge
Simple Drive Requirement
Pb-free lead plating package
100V
4.5A
55mΩ
58mΩ
Symbol
MTB55N10Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
Ordering Information
Device
MTB55N10Q8-0-T3-G
Package
SOP-8
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB55N10Q8
CYStek Product Specification




CYStech Electronics

MTB55N10Q8 Datasheet Preview

MTB55N10Q8 Datasheet

N-Channel MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @VGS=10V, TA=25°C
Continuous Drain Current @VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=10mH, ID=4.5A, VGS=20V, VDD=25V
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation *3
TA=25
TA=70
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Spec. No. : C863Q8
Issued Date : 2012.12.13
Revised Date : 2016.08.10
Page No. : 2/9
Limits
100
±20
4.5
3.6
32 *1
4.5
101
0.5 *2
3.1
2
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Rth,j-c
Rth,j-a
20
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s ; 125°C/W when mounted on minimum copper pad.
The value in any given application depends on the user’s specific board design.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
IGSS
IDSS
RDS(ON) *1
GFS *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
td(ON) *1, 2
tr *1, 2
td(OFF) *1, 2
tf *1, 2
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1.4
-
2.5
V
VGS=0V, ID=250μA
VDS =VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
25
μA
VDS =80V, VGS =0V
VDS =80V, VGS =0V, TJ=125°C
55
58
75
80
mΩ
VGS =10V, ID=4.5A
VGS =4.5V, ID=3A
15 - S VDS =5V, ID=3A
16 21
1.9 2.5 nC ID=4.5A, VDS=80V, VGS=10V
6.7 9
7 15
4
20
10
40
ns
VDS=50V, ID=4.5A, VGS=10V,
RG=6Ω
11 25
MTB55N10Q8
CYStek Product Specification


Part Number MTB55N10Q8
Description N-Channel MOSFET
Maker CYStech Electronics
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