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NX6308GH Datasheet Laser Diode

Manufacturer: California Eastern Labs

Overview: LASER DIODE NX6308GH 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.

General Description

The NX6308GH is a 1 310 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

APPLICATION • 1.25 Gb/s FTTH PON (Fiber To The Home Passive Optical Network)

Key Features

  • Optical output power.
  • Low threshold current.
  • Differential efficiency.
  • Wide operating temperature range.
  • InGaAs monitor PIN-PD.
  • CAN package.
  • Focal point Po = 10.0 mW lth = 10 mA ηd = 0.4 W/A TC =.
  • 40 to +85°C φ 5.6 mm 7.5 mm Document No. PL10692EJ03V0DS (3rd edition) Date Published March 2010 NS The mark  shows major revised points. The revised points can be easily searched by copying an "" in the PDF file and specifyin.

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