2N5333
PNP SILICON POWER TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5333 is
a PNP Silicon Power Transistor manufactured
by the epitaxial planar process, mounted in a
hermetically sealed metal case, designed for
amplifier and switching applications.
TO-39 CASE
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current (tp < 0.3ms)
Continuous Base Current
Power Dissipation (TA=25°C)
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
ΘJA
100
80
6.0
2.0
5.0
1.0
1.0
-65 to +200
175
UNITS
V
V
V
A
A
A
W
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
ICES
VCE=90V
ICES
VCE=50V (TC=150°C)
ICEO
VCE=40V
IEBO
VEB=4.0V
IEBO
VEB=6.0V
BVCEO
IC=30mA
80
VCE(SAT)
IC=1.0A, IB=100mA
VCE(SAT)
IC=2.0A, IB=400mA
VBE(ON)
VCE=4.0V, IC=2.0A
hFE VCE=4.0V, IC=1.0A
30
hFE VCE=4.0V, IC=2.0A
10
hfe
VCE=10V, IC=1.0A, f=1KHz
30
{ }fT VCE=10V, IC=1.0A
30
ton IC=1.0A, IB1=IB2=100mA
150
toff VBE(OFF)=3.7V, RL=20Ω
450
MAX
10
500
50
1.0
100
0.45
1.0
1.5
120
UNITS
μA
μA
μA
μA
μA
V
V
V
V
MHz
ns
ns
R0 (25-September 2008)
