BC858
DESCRIPTION
: The CENTRAL SEMICONDUCTOR BC856, BC857 and BC858 Series devices are silicon PNP transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications.
MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE
Note: Reverse Lead Codes Available, Add “R” to the end of the Part # and Marking Code.
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Peak Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VCBO VCEO VEBO
IC ICM IBM PD TJ, Tstg ΘJA
BC858 30 30
BC857 50 45 5.0 100 200 200 330
-55 to +150 375
BC856 80 65
UNITS V V V m A m A m A m W °C °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
ICBO
VCB=30V
ICBO
VCB=30V, TA=150°C
IEBO
VEB=5.0V
BVCBO
IC=10µA (BC856)
BVCBO
IC=10...
