Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CPD04. For precise diagrams, and layout, please refer to the original PDF.
PROCESS General Purpose Rectifier 500mA Glass Passivated Rectifier Chip CPD04 www.DataSheet4U.com PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area To...
View more extracted text
OCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization GLASS PASSIVATED MESA 26 x 26 MILS 8.5 MILS 14 x 14 MILS Ni/Au - 5,000Å/2,000Å Ni/Au - 5,000Å/2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,000 PRINCIPAL DEVICE TYPES 1N645 thru 1N649 CBRHD-02 Series R4 (22-March 2010) w w w. c e n t r a l s e m i . c o m PROCESS CPD04 Typical Electrical Characteristics R4 (22-March 2010) w w w. c e n t r a l s e m i .
CPD04 Datasheet
