CTLDM8002A-M621 Key Features
- Low rDS(on)
- Low VDS(on)
- Low Threshold Voltage
- Fast Switching
- Logic Level patible
- Small TLM™ 2x1mm Package
- Continued: (TA=25°C unless otherwise noted)
- MECHANICAL OUTLINE
- Exposed pad P connects pins 1, 2, 5, and 6
CTLDM8002A-M621 is SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET manufactured by Central Semiconductor.
| Part Number | Description |
|---|---|
| CTLDM8120-M832D | SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM303N-M832DS | SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLDM7590 | SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET |
| CTLHR10-06 | SILICON HYPERFAST RECOVERY RECTIFIER |
| CTLM1034-M832D | SURFACE MOUNT SILICON NPN TRANSISTOR AND SCHOTTKY RECTIFIER |
The CENTRAL SEMICONDUCTOR CTLDM8002A-M621 is a silicon P-Channel enhancement-mode MOSFET in a small, thermally efficient, TLM™ 2x1mm package. CN TLM621 CASE APPLICATIONS: Load/Power Switches Power Supply Converter Circuits Battery Powered Portable Equipment.