Datasheet Details
| Part number | CTLT8099-M322S |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 195.71 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CTLT8099-M322S-CentralSemiconductor.pdf |
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Overview: CTLT8099-M322S SURFACE MOUNT NPN SILICON TRANSISTOR TLM322S CASE w w w. c e n t r a l s e m i .
| Part number | CTLT8099-M322S |
|---|---|
| Manufacturer | Central Semiconductor |
| File Size | 195.71 KB |
| Description | SURFACE MOUNT NPN SILICON TRANSISTOR |
| Datasheet | CTLT8099-M322S-CentralSemiconductor.pdf |
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: The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM™ surface mount package, designed for general purpose amplification and switching in energy efficient applications.
MARKING CODE: 89C APPLICATIONS: • Load switching • Display drive • Power management • Gate drive MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg ΘJA 80 80 6.0 500 1.45 -65 to +150 86.2 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=80V IEBO VBE=6.0V BVCBO IC=100μA 80 BVCEO IC=10mA 80 BVEBO IE=10μA 6.0 VCE(SAT) IC=100mA, IB=5.0mA VCE(SAT) IC=100mA, IB=10mA VBE(ON) VCE=5.0V, IC=10mA 0.6 hFE VCE=5.0V, IC=1.0mA 100 hFE VCE=5.0V, IC=10mA 100 hFE VCE=5.0V, IC=100mA 75 fT VCE=5.0V, IC=10mA, f=100MHz 150 Cob VCB=10V, IE=0, f=1.0MHz Cib VBE=0.5V, IC=0, f=1.0MHz MAX 0.1 0.1 0.4 0.3 0.8 300 6.0 25 UNITS V V V mA W °C °C/W UNITS μA μA V V V V V V MHz pF pF R5 (10-October 2012) CTLT8099-M322S SURFACE MOUNT NPN SILICON TRANSISTOR TLM322S CASE - MECHANICAL OUTLINE LEAD CODE: 1) Base 2) Emitter 3) Collector MARKING CODE: 89C w w w.
c e n t r a l s e m i .
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