CEBF630 Features
* Type CEPF630 CEBF630 CEFF630 VDSS 200V 200V 200V RDS(ON) 0.35Ω 0.35Ω 0.35Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES
CEBF630_Chino-ExcelTechnology.pdf
Datasheet Details
CEBF630, CEBF630_Chino
Chino-Excel Technology
375.69 KB
N-channel enhancement mode field effect transistor.
This datasheet PDF includes multiple part numbers: CEBF630, CEBF630_Chino.
Please refer to the document for exact specifications by model.
📁 Related Datasheet
CEBF630B N-Channel MOSFET (CET)
CEBF634 N-Channel MOSFET (CET)
CEBF640 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEBFZ44 N-Channel Enhancement Mode Field Effect Transistor (Chino-Excel Technology)
CEB01N6 N-Channel MOSFET (CET)
CEB01N65 N-Channel MOSFET (CET)
CEB01N6G N-Channel MOSFET (CET)
CEB02N6 N-Channel MOSFET (CET)
CEBF630 Distributor
