CEM8958 channel) equivalent, dual enhancement mode field effect transistor(n and p channel).
30V, 7A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V.
-30V, -5.2A, RDS(ON) = 52mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V.
Super high dense cell design for ext.
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