* VDS = 16V,ID =7A RDS(ON) (Typ.) 11mΩ @ VGS=4.5V RDS(ON) (Typ.) 12mΩ @ VGS=3.8V RDS(ON)(Typ.) 14mΩ @ VGS=2.5V
* High Power and current handing capability
.

General Features
* VDS = 16V,ID =7A RDS(ON) (Typ.) 11mΩ @ VGS=4.5V RDS(ON) (Typ.) 12mΩ @ VGS=3.8V RDS(ON)(Typ.) .

N-Channel Enhancement Mode Power MOSFET

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