n-channel enhancement mode power mosfet.
APPLICATION
* VDS=60V, ID=80A
RDS(ON)(Typ.)=6.8mΩ @ VGS=10V
* Special Designed for E-Bike Controller
Application
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* Ultra Low On-Resistance
* High UIS.
Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applic.
The MXD6888K is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications.
GENERAL FEATURES
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