Datasheet4U Logo Datasheet4U.com

PE2333A - P-Channel Enhancement Mode Power MOSFET

Description

The PE2333A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -18V, ID = -6A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet preview – PE2333A

Datasheet Details

Part number PE2333A
Manufacturer ChipSourceTek
File Size 786.56 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE2333A Datasheet
Additional preview pages of the PE2333A datasheet.

📁 Similar Datasheet

  • PE2333A - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2300 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2301 - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2301A - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2302 - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2302A - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2304A - N-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2305 - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2305A - P-Channel Enhancement Mode Power MOSFET (semi one)
  • PE2308A - N-Channel Enhancement Mode Power MOSFET (semi one)
Other Datasheets by ChipSourceTek
  • PE2301A - P-Channel Enhancement Mode Power MOSFET
  • PE2302A - N-Channel Enhancement Mode Power MOSFET
  • PE2306A - Enhancement Mode Power MOSFET
  • PE2319 - P-Channel Enhancement Mode Power MOSFET
  • PE2012 - N-Channel Enhancement Mode Power MOSFET
  • PE2012T - N-Channel Enhancement Mode Power MOSFET
  • PE2023 - P-Channel Enhancement Mode Power MOSFET
  • PE2209A - P-Channel Power MOSFET

Full PDF Text Transcription

Click to expand full text
PE2333A P-Channel Enhancement Mode Power MOSFET Description The PE2333A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -18V, ID = -6A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.
Published: |