• Part: PE3010
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 0.99 MB
Download PE3010 Datasheet PDF
ChipSourceTek
PE3010
Description The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management - Battery Protection Marking and pin assignment 矽源特o科urce Te Absolute Maximum Ratings (TA=25℃ unless otherwise noted) S Parameter Drain-Source Voltage ip Gate-Source Voltage Drain Current-Continuous (TA=25℃) h Drain Current-Continuous (TA=70℃) C Pulsed Drain Current (Note 1) Symbol VDS VGS ID ID IDM SOP-8 Rating 30 ±20 10 7.6 50 Unit V V A A A Maximum Power Dissipation Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance, Junction-to-Ambient (Note 2) RθJA ℃/W TEL:...