Download the PE3010 datasheet PDF.
This datasheet also covers the PE3010-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
Note: The manufacturer provides a single datasheet file (PE3010-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for PE3010 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
PE3010. For precise diagrams, and layout, please refer to the original PDF.
PE3010 N-Channel Enhancement Mode Power MOSFET Description The PE3010 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in ...
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y to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 30V, ID = 10A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=4.
PE3010 Datasheet
