PE30P11DS Datasheet, MOSFET, ChipSourceTek

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PE30P11DS Features and benefits

* VDS = -30V, ID = -10A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V Schematic diagram
* High Power and current handing capability
* Lead free prod.

PE30P11DS Application

PE30P11DS General Features
* VDS = -30V, ID = -10A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=-4.5V Schemati.

PE30P11DS Description

The PE30P11DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE30P11DS General Features
* VDS = -30V, ID = -10A RDS(ON) < 17mΩ @ VGS=-10V RDS(ON) < 25mΩ @ VGS=.

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