Datasheet Summary
N and P Channel Enhancement Mode Power MOSFET
Description
The PE4606 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- N-Channel
- VDS = 30V, ID = 6.5A
RDS(ON) < 30mΩ @ VGS=10V
RDS(ON) < 42mΩ @ VGS=4.5V
Schematic diagram
- P-Channel
- VDS = -30V, ID = -6A
RDS(ON) < 33mΩ @ VGS=-10V RDS(ON) < 44mΩ @ VGS=-4.5V
技
- High Power and current handing capability
- Lead free product is acquired k
- Surface Mount Package 科 e Application 特 T
- PWM applications
- DC motor
Marking and pin assignment
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