Datasheet Summary
P-Channel Enhancement Mode Power MOSFET
Description
The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications.
General Features
- VDS = -18V, ID = -50A
RDS(ON) < 6.3mΩ @ VGS=-4.5V RDS(ON) < 7.0mΩ @ VGS=-3.8V RDS(ON) < 8.1mΩ @ VGS=-3.1V RDS(ON) < 9.0mΩ @ VGS=-2.5V
Schematic diagram
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
- Good stability and uniformity with high EAS
技 k Application 科 e
- PWM applications
- Load switch
特 T
- Power management
- Battery protection
Marking and pin assignment
源 rcePDFN3.3x3.3-8L
矽 u...