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PE7150M - P-Channel Enhancement Mode Power MOSFET

Description

The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -18V, ID = -50A RDS(ON) < 6.3mΩ @ VGS=-4.5V RDS(ON) < 7.0mΩ @ VGS=-3.8V RDS(ON) < 8.1mΩ @ VGS=-3.1V RDS(ON) < 9.0mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.
  • Good stability and uniformity with high EAS k.

📥 Download Datasheet

Datasheet Details

Part number PE7150M
Manufacturer ChipSourceTek
File Size 1.15 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7150M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
P-Channel Enhancement Mode Power MOSFET Description The PE7150M uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. PE7150M General Features ● VDS = -18V, ID = -50A RDS(ON) < 6.3mΩ @ VGS=-4.5V RDS(ON) < 7.0mΩ @ VGS=-3.8V RDS(ON) < 8.1mΩ @ VGS=-3.1V RDS(ON) < 9.0mΩ @ VGS=-2.5V Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package ● Good stability and uniformity with high EAS k Application e ● PWM applications ● Load switch T ● Power management ● Battery protection Marking and pin assignment rcePDFN3.3x3.
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