• Part: PE8612K
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: ChipSourceTek
  • Size: 765.38 KB
Download PE8612K Datasheet PDF
ChipSourceTek
PE8612K
Description The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features - VDS = 60V, ID = 12A RDS(ON) < 70mΩ @ VGS=10V RDS(ON) < 80mΩ @ VGS=4.5V Schematic diagram - High Power and current handing capability - Lead free product is acquired - Surface Mount Package Application 技 - PWM applications - Load switch k - Power management Marking and pin assignment 矽源特科urce Te Absolute Maximum Ratings (TC=25℃ unless otherwise noted) o Parameter S Drain-Source Voltage Gate-Source Voltage ip Drain Current-Continuous Drain Current-Continuous (TC=100℃) h Pulsed Drain Current (Note 1) C Maximum Power Dissipation Symbol VDS VGS ID ID IDM PD TO-252-2L Rating 60 ±20 12 9 36 20 Unit V V A A A W Avalanche Current Avalanche Energy (L=0.1m H) 15 m J Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,...