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PE8612K - N-Channel Enhancement Mode Power MOSFET

Download the PE8612K datasheet PDF. This datasheet also covers the PE8612K-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V, ID = 12A RDS(ON) < 70mΩ @ VGS=10V RDS(ON) < 80mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE8612K-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE8612K
Manufacturer ChipSourceTek
File Size 765.38 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE8612K Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE8688W N-Channel Enhancement Mode Power MOSFET
PE8124HM1 N-Channel Enhancement Mode Power MOSFET
PE8205 N-Channel Enhancement Mode Power MOSFET
PE8205A N-Channel Power MOSFET
PE8205L N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE8612K N-Channel Enhancement Mode Power MOSFET Description The PE8612K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V, ID = 12A RDS(ON) < 70mΩ @ VGS=10V RDS(ON) < 80mΩ @ VGS=4.
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