BD142 Datasheet | Comset Semiconductors

BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-power applications. It is especially suited for use in audio and inverter circuits at 12 volts. pliance to Ro HS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC IB PT TJ TS Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector-Emitter Voltage Collector Current Base Current Power Dissipation Junction Temperature Storage Temperature Ratings Value 45 50 7 50 15 7 117 -65 to +200 Unit V V V V A A Watts °C VBE=-1.5 V .Data Sheet.net/ @ TC = 25° THERMAL CHARACTERISTICS Symbol Rth J-C Ratings Thermal Resistance, Junction to Case Value Unit °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(BR) VCEX(BR) VCE(SAT) ICEX IEBO VBE IS/B h FE Ratings Collector-Emitter Breakdown Voltage (- ) Collector-Emitter Breakdown Voltage (- ) Collector-Emitter Saturation Voltage (- ) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (- ) Second Breakdown collector current Static Forward Current Transfer Ratio (- ) Test Condition(s) IC=200 m A, IB=0 IC=100 m A, VBE=-1.5 V IC=4 A, IB=0.4 A VCE= 40 V, VBE=-1.5 V VEB=7 V IC=4.0 A, VCE=4.0V t=1s, VCE=39 V VCE=4.0 V, IC=4.0 A VCE=4.0 V, IC=0.5 A Min 45 50 3 12.5 20 Typ Max Unit V V V m A m A V A - - 1.1 2 1 1.5 160 1/2 (- ) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% 18/10/2012 SET SEMICONDUCTORS Datasheet pdf - http://..co.kr/...