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C3M0120065D Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

Overview: VDS 650 V C3M0120065D ID @ 25˚C 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement.

C3M0120065D datasheet preview

Datasheet Details

Part number	C3M0120065D
Manufacturer	Cree (now Wolfspeed)
File Size	922.84 KB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0120065D-Cree.pdf

Key Features

Package.
3rd Generation SiC MOSFET technology.
High blocking voltage with low on-resistance.
High speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant Benefits.
Higher system efficiency.
Reduced cooling requirements.
Increased power density.
Increased system switching frequency.
Easy to parallel and simple to drive.
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Similar Datasheet

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	C3M0120065K	Silicon Carbide Power MOSFET	Wolfspeed
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C3M0120065D Distributor