CY15B128J Key Features
- 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast two-wire serial interface (I2C)
- Up to 3.4-MHz frequency[1]
- Direct hardware replacement for serial EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Device ID
