CY15B128J
Overview
- 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process
- Fast two-wire serial interface (I2C) ❐ Up to 3.4-MHz frequency[1] ❐ Direct hardware replacement for serial EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz
- Device ID ❐ Manufacturer ID and Product ID
- Low power consumption ❐ 175-A active current at 100 kHz ❐ 150-A standby current ❐ 8-A sleep mode current
- Low-voltage operation: VDD = 2.0 V to 3.6 V
- Automotive-A temperature: -40 °C to +85 °C
- 8-pin small outline integrated circuit (SOIC) package
- Restriction of hazardous substances (RoHS) compliant Logic Block Diagram Functional Description The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the CY15B128J performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. F-RAM also exhibits much lower power during writes than EEPROM because write operations do not require an internally elevated power supply voltage for write circuits. The CY15B128J is capable of supporting 1014 read/write cycles, or 100 million times more write cyc
