CY15B128J Overview
The CY15B128J is a 128-Kbit nonvolatile memory employing an advanced ferroelectric process. An F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the plexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories.
CY15B128J Key Features
- 128-Kbit ferroelectric random access memory (F-RAM) logically organized as 16K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
- Fast two-wire serial interface (I2C)
- Up to 3.4-MHz frequency[1]
- Direct hardware replacement for serial EEPROM
- Supports legacy timings for 100 kHz and 400 kHz
- Device ID
