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CY62146GN - 4-Mbit (256K x 16) Static RAM

Description

The CY62146GN is a high performance CMOS static RAM organized as 256K words by 16 bits.

Features

  • Very high speed: 45 ns.
  • Temperature ranges.
  • Industrial:.
  • 40 °C to +85 °C.
  • Wide voltage range: 2.20 V to 3.60 V and 4.5 V to 5.5 V.
  • Ultra low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Ultra low active power.
  • Typical active current: 3.5 mA at f = 1 MHz.
  • Automatic power down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Available in a 44-pin TSOP.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY62146G 4-Mbit (256K words x 16 bit) Static RAM
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62146GN MoBL® 4-Mbit (256K × 16) Static RAM 4-Mbit (256K × 16) Static RAM Features ■ Very high speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ■ Wide voltage range: 2.20 V to 3.60 V and 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Ultra low active power ❐ Typical active current: 3.5 mA at f = 1 MHz ■ Automatic power down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in a 44-pin TSOP II and 48-ball VFBGA Packages Functional Description The CY62146GN is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features an advanced circuit design designed to provide an ultra low active current.
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