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CY7C1049GN - 4-Mbit (512K words x 8 bit) Static RAM

Description

CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits.

Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins.

Features

  • High speed.
  • tAA = 10 ns.
  • Low active and standby currents.
  • Active current: ICC = 38 mA typical.
  • Standby current: ISB2 = 6 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 36-pin SOJ and 44-pin TSOP II packages Functional.

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Datasheet preview – CY7C1049GN

Datasheet Details

Part number CY7C1049GN
Manufacturer Cypress
File Size 432.28 KB
Description 4-Mbit (512K words x 8 bit) Static RAM
Datasheet download datasheet CY7C1049GN Datasheet
Additional preview pages of the CY7C1049GN datasheet.

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Full PDF Text Transcription

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CY7C1049GN 4-Mbit (512K words × 8 bit) Static RAM 4-Mbit (512K words × 8 bit) Static RAM Features ■ High speed ❐ tAA = 10 ns ■ Low active and standby currents ❐ Active current: ICC = 38 mA typical ❐ Standby current: ISB2 = 6 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 36-pin SOJ and 44-pin TSOP II packages Functional Description CY7C1049GN is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data writes are performed by asserting the Chip Enable (CE) and Write Enable (WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins.
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