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CY7C1049GE - 4-Mbit (512K words x 8 bit) Static RAM

This page provides the datasheet information for the CY7C1049GE, a member of the CY7C1049G 4-Mbit (512K words x 8 bit) Static RAM family.

Description

CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC.

offered in single and dual chip-enable options and in multiple pin configurations.

Features

  • High speed.
  • tAA = 10 ns.
  • Embedded ECC for single-bit error correction[1].
  • Low active and standby currents.
  • Active current: ICC = 38 mA typical.
  • Standby current: ISB2 = 6 mA typical.
  • Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 36-pin SOJ and 44-pin TSOP II packages Fun.

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Datasheet preview – CY7C1049GE

Datasheet Details

Part number CY7C1049GE
Manufacturer Cypress Semiconductor
File Size 778.19 KB
Description 4-Mbit (512K words x 8 bit) Static RAM
Datasheet download datasheet CY7C1049GE Datasheet
Additional preview pages of the CY7C1049GE datasheet.

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Full PDF Text Transcription

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CY7C1049G CY7C1049GE 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed ❐ tAA = 10 ns ■ Embedded ECC for single-bit error correction[1] ■ Low active and standby currents ❐ Active current: ICC = 38 mA typical ❐ Standby current: ISB2 = 6 mA typical ■ Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Pb-free 36-pin SOJ and 44-pin TSOP II packages Functional Description CY7C1049G and CY7C1049GE are high-performance CMOS fast static RAM devices with embedded ECC.
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