CY14B104N
Features
- -
- -
- -
- -
- -
- -
- Functional Description
The Cypress CY14B104L/CY14B104N is a fast static RAM, with a nonvolatile element in each memory cell. The memory is organized as 512K words of 8 bits each or 256K words of 16 bits each. The embedded nonvolatile elements incorporate Quantum Trap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable Quantum Trap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power down. On power up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.
15 ns, 25 ns, and 45 ns access times Internally organized as 512K x 8 (CY14B104L) or 256K x 16 (CY14B104N) Hands off automatic STORE on power down with only a small capacitor STORE to Quantum Trap® nonvolatile elements initiated by software, device pin or Auto Store® on power down RECALL to SRAM initiated by software or power up...
